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| AO4612 Complementary Enhancement Mode Field Effect Transistor General Description The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AO4612 is Pb-free (meets ROHS & Sony 259 specifications). AO4612L is a Green Product ordering option. AO4612 and AO4612L are electrically identical. Features n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 56m (VGS=10V) < 77m (VGS=4.5V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 105m (VGS = -10V) < 135m (VGS = -4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Max p-channel -60 20 -3.2 -2.6 -20 2 1.28 -55 to 150 Typ 48 74 35 48 74 35 W C A Units V V Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation TA=70C TA=25C TA=70C ID IDM PD VGS 20 4.5 3.6 20 2 1.28 -55 to 150 Symbol RJA RJL RJA RJL Device n-ch n-ch n-ch p-ch p-ch p-ch TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Max Units 62.5 C/W 110 C/W 60 C/W 62.5 110 40 C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4612 N Channel Electrical Characteristics (T =25C unless otherwise noted) J Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=3A Forward Transconductance VDS=5V, ID=4.5A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=48V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=4.5A TJ=125C 1 20 46 79 64 11 0.74 56 77 1 3 540 2.1 Min 60 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC 7 4.5 24 4 35 ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 450 60 25 1.65 8.5 2 10.5 5.5 VGS=10V, VDS=30V, ID=4.5A 4.3 1.6 2.2 4.7 2.3 15.7 1.9 27.5 32 VGS=10V, VDS=30V, RL=6.7, RGEN=3 IF=4.5A, dI/dt=100A/s 2 Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 20 10V 15 ID (A) 5.0V 4.5V 10 4.0V 5 VGS=3.5V 0 1 2 3 4 5 0 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 0 25 50 75 100 125 150 175 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=4.5A 120 RDS(ON) (m) 100 125C 80 60 40 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E+00 1.0E-01 IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS=10V ID=4.5A VGS=4.5V ID=3.0A ID(A) 10 125C VDS=5V 15 5 25C 0 VDS (Volts) Fig 1: On-Region Characteristics 100 90 80 RDS(ON) (m) 70 60 50 40 30 20 VGS=10V VGS=4.5V 140 Alpha & Omega Semiconductor, Ltd. AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 8 VGS (Volts) 6 4 2 0 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 800 VDS=30V ID= 4.5A Capacitance (pF) 600 Ciss 400 Coss Crss 0 0 10 20 30 40 50 60 VDS (Volts) Figure 8: Capacitance Characteristics 200 100.0 RDS(ON) limited 10.0 10ms 1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.1s 1ms 100s 10s Power (W) 40 TJ(Max)=150C TA=25C 30 ID (Amps) 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 10 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO4612 P-Channel Electrical Characteristics (T =25C unless otherwise noted) J Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-2.8A Forward Transconductance VDS=-5V, ID=-3.2A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-48V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-3.2A TJ=125C -1 -20 84 145 106 9 -0.73 105 135 -1 -3 1120 -2.1 Min -60 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC 12 7.5 48 15 35 ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 930 85 35 7.2 16 9 20 10 SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=-10V, VDS=-30V, ID=-3.2A 8 2.5 3.2 8 3.8 31.5 7.5 27 32 VGS=-10V, VDS=-30V, RL=9.4, RGEN=3 IF=-3.2A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=-3.2A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the tt 10s thermal resistance given application depends on the user's specific board design. The current rating is based on the 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev2: August 2005 Alpha & Omega Semiconductor, Ltd. AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 20 -10V 15 -ID (A) -4.5V -4.0V -ID(A) 20 15 10 5 VGS=-3.0V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 130 Normalized On-Resistance 120 RDS(ON) (m) 110 100 90 80 70 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 RDS(ON) (m) 140 120 100 80 60 2 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C ID=-3.2 1.0E+01 1.0E+00 1.0E-01 125C VGS=-10V VGS=-4.5V 5 25C 0 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-4.5V ID=-2.8A ID=-3.2A VGS=-10V 125C 30 25 VDS=-5V 10 -3.5V Alpha & Omega Semiconductor, Ltd. AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 8 -VGS (Volts) 6 4 2 0 0 4 8 12 16 20 VDS=-30V ID=-3.2A 1400 1200 Capacitance (pF) 1000 800 600 400 Coss 200 0 0 10 20 30 40 50 60 -VDS (Volts) Figure 8: Capacitance Characteristics Crss Ciss -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 1.0 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 0 0.001 40 TJ(Max)=150C TA=25C 10ms Power (W) -ID (Amps) 10.0 1ms 100s 30 20 10 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 T 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 Alpha & Omega Semiconductor, Ltd. |
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